Quantum dot
lasers epitaxially grown on Si are promising for an efficient light source for
silicon photonics. In the talk, I will present record-high performance and
excellent reliability of 1.3 μm quantum dot lasers on Si enabled by a low
threading dislocation density GaAs buffer layer. Continuous-wave threshold
currents as low as 4.8 mA and output powers of 185 mw have been achieved from
narrow ridge-waveguide lasers at 20 °C. P-modulation doped lasers operated up
to 107 °C. 1800-hour reliability tests at 35 °C showed an extrapolated
mean-time-to-failure of more than a million hours. Micro-ring QD lasers on Si
were also fabricated and showed an ultralow threshold current of 0.5 mA. I will
also present a preliminary result on monolithically integrated III/V laser,
waveguide, and photodetectors on Si. This represents a significant stride
toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for
photonic integrate circuits that are fully compatible with CMOS foundries.