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High-speed III-nitride laser diodes for visible light communication

High-speed III-nitride laser diodes for visible light communication

강사 : 이창민|강의수 : 1|강의기간 : 2017-11-15 ~ 2017-11-15|최근 업데이트 : 2017-11-15 17:10:49

III-nitride laser diodes (LDs) have been developed for many applications such as optical storage, medical, and solid-state lighting. However, the performance of LDs grown on conventional polar (0001) c-plane GaN has been hindered due to polarization-induced electric fields, leading to a reduction of wave-function overlap. Recent progress on semipolar and nonpolar planes has shown significant improvement in high-power performance of LEDs and LDs by reducing the polarization-induced electric field. Conventional III-nitride LEDs have typical bandwidth limits in the MHz range due to comparatively long carrier lifetime (on the order of ns) and significant RC parasitic effect. Even worse, for white lighting configuration, the response is significantly limited by slow relaxation lifetime (on the order of μs) of phosphor conversion. However, recent studies on LDs for light fidelity (LiFi) applications have demonstrated more than GHz bandwidth and Gbit/s data transmission rate with inherent advantage of short photon lifetime. As an alternative to LED technology, the use of laser diodes (LDs) as a transmitter presents a viable approach to overcome the limitations of modulation bandwidth as well as the lighting efficiency. Despite of these merits, only limited studies have been reported for LD-based VLC and LiFi demonstration without notable improvement in modulation capabilities. Since semipolar and nonpolar LDs are expected to have higher differential gain and lower threshold than c-plane LDs as mentioned above, they also have high potential for improvements in modulation bandwidth. Thus, nonpolar and semipolar LD is potential candidate for future LiFi applications requiring high-capacity for high-speed data transmission as well as high-efficiency for lighting.

 

 

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