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경북대학교 ICT창의인재양성사업단, Brain Korea 21 Plus KNU ICT Open CourseWare


홈 > 학문/산업 분야별 강좌

학문/산업 분야별 강좌

전체강좌 23, 현재 1 / 전체 3페이지
  • LED를 이용한 포터블 형광센서시스템 영상 +강의담기 학문/산업 분야별 강좌 ▶ 반도체_센서기술 ▶


    LED 및 실리콘광센서를 이용하여 microfluidics chip을 통한 미세조류 등 의 환경시료를 분석할 수 있는 현장진단형 형광센서시스템의 설계 및 그 활용에 대해 발표하고, 다양한 분야에 대한 응용에 대해 논의하고자 함.

    형광센서 모델은 타겟 분석물을 자극하기 위한 3가지 상이한 파장의 발광다이오드 (LED)를 사용하고, 샘플로부터 낮은 형광 방출을 검출하기 위해 매우 정밀한 SiPM(Silicon Photomultiplier)을 사용함. 그에 대응하는 형광 측정을 위한 정밀한 광 검출기를 사용함. 각 분석물로부터 얻어진 형광 방출 패턴에 기초하여, 다중 분석물의 혼합물에서 하나의 분석물을 검출이 가능함.

    또한 루이지애나주립대에서 진행 중인 다양한 센서 연구에 대해 소개하고자 함


    강좌기간 : 2018-11-23 ~ 2018-11-23 | 강좌수 : 1 | 최근업데이트 : 2018-11-23 |조회 : 16
  • Research Environments in France and Heterogeneous Integration with Energy Harvesting Techniques for Wireless Sensor Network 영상 +강의담기 학문/산업 분야별 강좌 ▶ 반도체_센서기술 ▶ 세미나 및 튜토리얼


    This seminar will first introduce the research environments of France focusing on French governmental research organizations such as CNRS, INSERM, CEA, INRA etc. The system of CNRS, the largest research institute of France, will be explained with its history and highlights. Research topic of CNRS researchers is important to begin their career and thus an example will be shortly introduced. Secondly, research activities on heterogeneous integration for wireless sensor network will be summarized. Powering sensor nodes based on external vibration is interesting to make them energically autonomous. As a method of energy harvesting, extraction of electrical energy using a vibrating piezoelectric device is being attractive. Other energy harvesting devices will be also presented.


    강좌기간 : 2018-10-25 ~ 2018-10-25 | 강좌수 : 1 | 최근업데이트 : 2018-10-26 |조회 : 15
  • CMOS integrated circuits and system for affordable terahertz electronics 영상 +강의담기 학문/산업 분야별 강좌 ▶ 반도체_센서기술 ▶ 세미나 및 튜토리얼


    Sub-terahertz and terahertz waves, electromagnetic waves within the frequency range from 100GHz to 10THz, enable unprecedented capabilities thanks to their unique characteristics, such as short wavelength, wide bandwidth and spectral specificity. Key applications include high-resolution imaging, high-speed data communication and gas analysis with absolute specificity through rotational spectroscopy. However, the high cost of the terahertz instrumentation has been limiting its proliferation. If developed, compact and low-cost terahertz electronic systems will accelerate the adoption of terahertz technologies in everyday life. Si-based terahertz electronics can be one of the key enabler of such systems.

    In this seminar, Si CMOS integrated circuits for terahertz applications will be introduced. Following a brief discussion on the tradeoffs and design approaches for CMOS terahertz circuit design, details of example circuits will be presented. The example circuits include 1) a 410-GHz short-range imaging receiver 2) a 240-GHz wideband receiver for rotational spectroscopy 3) a 300-GHz QPSK transmitter for 30-Gbps dielectric waveguide communications.


    강좌기간 : 2018-07-13 ~ 2018-07-13 | 강좌수 : 1 | 최근업데이트 : 2018-07-13 |조회 : 26
  • MEMS-Based Bio Devices, Liquid Metal Electronics and Nanophotonics 영상 +강의담기 학문/산업 분야별 강좌 ▶ 반도체_센서기술 ▶ 세미나 및 튜토리얼


    MEMS technologies have enabled many innovative applications across various disciplines. In this talk, recent developments of MEMS-enabled implantable biomedical micro devices, liquid metal microfluidics and nanophotonics developed at UT Dallas will be presented. Examples of the implantable micro devices include a fully-integrated inductively-coupled battery-less wireless pressure sensor for intraocular pressure sensing application, a fully-integrated inductively-coupled wireless micro neurostimulator forchronic pain management, and a micro cell container for β-cell transplantation for diabetes treatment. For the liquid metal microfluidics, fundamental studies on the microfluidic platforms for liquid metal manipulation and its enormous potential along with wide range of applications will be discussed. Nanophotonics is an emerging field of study which deals with interaction of light with nano scale matters. While there have been many fascinating demonstrations in nanophotonics, adding on-demand tunability to the nanophotonics would greatly expand existing application areas and potentially enable unforeseen new applications. Among many exciting “tunable” nanophotonics, this talk gives a review about recent developments of tunable nano photonic devices using MEMS.


    강좌기간 : 2018-06-29 ~ 2018-06-29 | 강좌수 : 1 | 최근업데이트 : 2018-07-02 |조회 : 15
  • Vertical silicon nanowires for image sensor applications 영상 +강의담기 학문/산업 분야별 강좌 ▶ 반도체_센서기술 ▶ 세미나 및 튜토리얼


    Conventional image sensors achieve color imaging using absorptive organic dye filters. These face considerable challenges however in the trend toward ever higher pixel densities and advanced imaging such as multispectral imaging and polarization-resolved imaging. In this talk, we will present a new paradigm for color imaging based on all-silicon nanowire devices without any color filters. We fabricate pixels consisting of vertical silicon nanowires with integrated photodetectors, demonstrate that t heir spectral sensitivities are governed by nanowire radius, and perform color imaging. We also demonstrate polarization-resolving photodetectors consisting of silicon nanowires with elliptical cross sections. Our approach is conceptually different from filter-based methods, as absorbed light is converted to photocurrent, ultimately presenting the opportunity for very high photon efficiency. This work was performed at Harvard University under the supervision of Prof. Kenneth B. Crozier.


    강좌기간 : 2018-04-30 ~ 2018-04-30 | 강좌수 : 1 | 최근업데이트 : 2018-05-01 |조회 : 23
  • High performance InAs quantum dot lasers epitaxially grown on on-axis (001) Si for silicon photonics 영상 +강의담기 학문/산업 분야별 강좌 ▶ 반도체_센서기술 ▶ 세미나 및 튜토리얼

    Quantum dot
    lasers epitaxially grown on Si are promising for an efficient light source for
    silicon photonics. In the talk, I will present record-high performance and
    excellent reliability of 1.3 μm quantum dot lasers on Si enabled by a low
    threading dislocation density GaAs buffer layer. Continuous-wave threshold
    currents as low as 4.8 mA and output powers of 185 mw have been achieved from
    narrow ridge-waveguide lasers at 20 °C. P-modulation doped lasers operated up
    to 107 °C. 1800-hour reliability tests at 35 °C showed an extrapolated
    mean-time-to-failure of more than a million hours. Micro-ring QD lasers on Si
    were also fabricated and showed an ultralow threshold current of 0.5 mA. I will
    also present a preliminary result on monolithically integrated III/V laser,
    waveguide, and photodetectors on Si. This represents a significant stride
    toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for
    photonic integrate circuits that are fully compatible with CMOS foundries.


    강좌기간 : 2018-01-03 ~ 2018-01-03 | 강좌수 : 1 | 최근업데이트 : 2018-01-03 |조회 : 49
  • High-speed III-nitride laser diodes for visible light communication 영상 +강의담기 학문/산업 분야별 강좌 ▶ 반도체_센서기술 ▶ 세미나 및 튜토리얼

    III-nitride laser diodes (LDs) have been developed for many applications such as optical storage, medical, and solid-state lighting. However, the performance of LDs grown on conventional polar (0001) c-plane GaN has been hindered due to polarization-induced electric fields, leading to a reduction of wave-function overlap. Recent progress on semipolar and nonpolar planes has shown significant improvement in high-power performance of LEDs and LDs by reducing the polarization-induced electric field. Conventional III-nitride LEDs have typical bandwidth limits in the MHz range due to comparatively long carrier lifetime (on the order of ns) and significant RC parasitic effect. Even worse, for white lighting configuration, the response is significantly limited by slow relaxation lifetime (on the order of μs) of phosphor conversion. However, recent studies on LDs for light fidelity (LiFi) applications have demonstrated more than GHz bandwidth and Gbit/s data transmission rate with inherent advantage of short photon lifetime. As an alternative to LED technology, the use of laser diodes (LDs) as a transmitter presents a viable approach to overcome the limitations of modulation bandwidth as well as the lighting efficiency. Despite of these merits, only limited studies have been reported for LD-based VLC and LiFi demonstration without notable improvement in modulation capabilities. Since semipolar and nonpolar LDs are expected to have higher differential gain and lower threshold than c-plane LDs as mentioned above, they also have high potential for improvements in modulation bandwidth. Thus, nonpolar and semipolar LD is potential candidate for future LiFi applications requiring high-capacity for high-speed data transmission as well as high-efficiency for lighting.



    강좌기간 : 2017-11-15 ~ 2017-11-15 | 강좌수 : 1 | 최근업데이트 : 2017-11-15 |조회 : 19
  • Developing Materials for Next Generation Device Applications 영상 +강의담기 학문/산업 분야별 강좌 ▶ 반도체_센서기술 ▶ 세미나 및 튜토리얼


    강좌기간 : 2017-03-15 ~ 2017-03-15 | 강좌수 : 1 | 최근업데이트 : 2017-04-06 |조회 : 34
  • Oxides for Novel Device Applications 2 영상 +강의담기 학문/산업 분야별 강좌 ▶ 반도체_센서기술 ▶ 세미나 및 튜토리얼


    강좌기간 : 2017-03-14 ~ 2017-03-14 | 강좌수 : 1 | 최근업데이트 : 2017-04-06 |조회 : 17
  • Oxides for Novel Device Applications 1 영상 +강의담기 학문/산업 분야별 강좌 ▶ 반도체_센서기술 ▶ 세미나 및 튜토리얼


    강좌기간 : 2017-03-14 ~ 2017-03-14 | 강좌수 : 1 | 최근업데이트 : 2017-04-06 |조회 : 11
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